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| SUM85N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.006 @ VGS = 10 V 0.009 @ VGS = 4.5 V ID (A) 85 77 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D TO-263 D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier G G DS Top View S Ordering Information: SUM85N03-06P SUM85N03-06P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85 67 200 45 101 100b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountc Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71903 S-32523--Rev. B, 08-Dec-03 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.5 Unit _C/W C/W 1 SUM85N03-06P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 20 0.0072 120 0.0045 0.006 0.0085 0.011 0.009 S W 30 1 3.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Resistance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 15 V, VGS = 10 V, ID = 50 A , , 0.5 VGS = 0 V, VDS = 25 V, f = 1 MHz 3100 565 255 1.9 48 10 7.5 12 12 30 10 20 20 45 15 ns 3.1 65 nC W pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 30 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 200 1.5 70 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71903 S-32523--Rev. B, 08-Dec-03 SUM85N03-06P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 5V 150 120 100 80 60 40 20 2, 3 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 100 4V TC = 125_C 25_C 50 -55_C Transconductance 120 TC = -55_C 25_C g fs - Transconductance (S) 80 125_C 60 40 20 0 0 20 40 60 80 100 r DS(on) - On-Resistance ( W ) 100 0.0125 0.0100 0.0150 On-Resistance vs. Drain Current VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 0.0025 0.0000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) 4000 3500 3000 2500 2000 1500 1000 500 0 0 6 Crss Capacitance Ciss 10 VDS = 15 V ID = 50 A Gate Charge V GS - Gate-to-Source Voltage (V) 8 C - Capacitance (pF) 6 4 Coss 2 0 12 18 24 30 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) www.vishay.com Document Number: 71903 S-32523--Rev. B, 08-Dec-03 3 SUM85N03-06P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 1.6 1.2 TJ = 150_C TJ = 25_C 10 0.8 0.4 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) 40 Drain-Source Voltage Breakdown vs. Junction Temperature 38 V (BR)DSS (V) 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71903 S-32523--Rev. B, 08-Dec-03 SUM85N03-06P Vishay Siliconix THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 1000 Safe Operating Area, Junction-to-Case 10 ms 80 I D - Drain Current (A) I D - Drain Current (A) 100 100 ms 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 60 10 Limited by rDS(on) 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Normalized Thermal Transient Impedance, Junction-to-Case Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71903 S-32523--Rev. B, 08-Dec-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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